General description
The NXP Semiconductors NXH5104 is a 4 Mbit serial electrically erasable and
programmable read-only memory (EEPROM). It provides byte level and page level serial
EEPROM functions, sector level protection and power-down functions. The device has
been developed for low-power low-voltage applications and is provided with a serial
peripheral interface (SPI) compatible interface.

Features and benefits
• Compact wafer-level chip-scale package (WLCSP) package
• – 7.8 mm2, 380 μm thick
– 13 bumps with 400 μm pitch
• Integrated power management unit (PMU)
• – VDD supply range 1.0 V to 2.0 V
– VDD(IO) supply range: VDD to 2.6 V
– Direct operation from ZnAir, NiMH, Silver-Zinc batteries
– Active peak current limiting
• Low current consumption
• – Average power down current < 5 μA
– Average read current 0.6 mA (VDD = VDD(IO) = 1.8 V, FSPI =5 MHz)
– Average write current 0.7 mA (VDD = VDD(IO) = 1.8 V, FSPI = 5 MHz)
• Low-power CMOS technology
• Auxiliary supply voltage enabling direct LED drive
• Self-timed program cycle
• – 256 byte page write buffer
– Partial page write allowed
• Write protect
• – Quarter, half or entire memory array
• Serial peripheral interface (SPI)
• – Speed up to 5 MHz for 1.2 V signaling level
– Speed up to 10 MHz for 1.8 V signaling level
– SPI mode 0 (0,0) and 3 (1,1) support
– SPI 3-wire support for SPI mode 0
• Fixed high supply mode for faster start-up
• Space-saving 2.80 mm × 2.74 mm wafer-level chip-scale package (WLCSP)
• Highly integrated: 1 external cap
• High reliability
• – 10-year data retention
– 500 000 program cycles
– Wear-out management
• Operating temperature −20 °C to +85 °C
• Support for different supply configurations
• Device ID and Unique ID
• Pb-free and RoHS compliant