Features
 Advanced Process Technology
 Dynamic dv/dt Rating
 175°C Operating Temperature
 Fast Switching
 Fully Avalanche Rated
 Ease of Paralleling
 Simple Drive Requirements
 Lead-Free

Description
IR MOSFET™ technology from Infineon utilizes
advanced processing techniques to achieve extremely
low on-resistance per silicon area. This benefit,
combined with the fast switching speed and rugged
device design that IR MOSFET™ devices are well
known for, provides the designer with an extremely
efficient and reliable device for use in a wide variety of
applications.
The TO-247 package is preferred for commercialindustrial
applications where higher power levels
preclude the use of TO-220 devices. The TO-247 is
similar but superior to the earlier TO-218 package
because of its isolated mounting hole.