FEATURES
• Advanced process technology
• Surface-mount (IRFZ48S, SiHFZ48S)
• Low-profile through-hole (SiHFZ48L)
• 175 °C operating temperature
• Fast switching
• Material categorization: for definitions of
compliance please see www.vishay.com/doc?99912
Note
* This datasheet provides information about parts that are
RoHS-compliant and / or parts that are non RoHS-compliant. For
example, parts with lead (Pb) terminations are not RoHS-compliant.
Please see the information / tables in this datasheet for details

DESCRIPTION
Third generation power MOSFETs from Vishay utilize
advanced processing techniques to achieve extremely low
on-resistance per silicon area. This benefit, combined with
the fast switching speed and ruggedized device design that
power MOSFETs are well known for, provides the designer
with an extremely efficient and reliable device for use in a
wide variety of applications.
The D2PAK (TO-263) is a surface-mount power package
capable of accommodating die sizes up to HEX-4. It
provides the highest power capability and the lowest
possible on-resistance in any existing surface-mount
package. The D2PAK (TO-263)is suitable for high current
applications because of its low internal connection
resistance and can dissipate up to 2 W in a typical
surface-mount application.
The through-hole version (SiHFZ48L) is available for
low-profile applications.