General Description
These P-Channel enhancement mode power field effect
transistors are produced using ON Semiconductor’s
proprietary, planar stripe, DMOS technology.
This advanced technology has been especially tailored to
minimize on-state resistance, provide superior switching
performance, and withstand high energy pulse in the
avalanche and commutation mode. These devices are well
suited for low voltage applications such as audio amplifier,
high efficiency switching DC/DC converters, and DC motor control.

Features
• -6.6A, -100V, RDS(on) = 0.53Ω @VGS = -10 V
• Low gate charge ( typical 12 nC)
• Low Crss ( typical 30 pF)
• Fast switching
• 100% avalanche tested
• Improved dv/dt capability
• Qualified to AEC Q101
• RoHS Compliant