Switchmode Full Plastic Dual SchottkyBarrier Power Rectifiers

Using the SchottkyBarrier principle with a Molybdenum barrier metal. These state-of-the-art geometryfeatures epitaxial construction with oxide passivation and metal overlaycontact. Ideally suited for lowvoltage, high frequency rectification, or as free wheeling and polarityprotection diodes.



* LowForward Voltage.

* LowSwitching noise.

* High Current Capacity

* Guarantee Reverse Avalanche.

* Guard-Ring for Stress Protection.

* LowPower Loss & High efficiency.

* 150℃ Operating Junction Temperature

* LowStored Charge MajorityCarrier Conduction.

* Plastic Material used Carries Underwriters Laboratory