Features
• No or negligible reverse recovery
• Temperature independent switching behavior
• High forward surge capability
• Operating Tj from -40 °C to 175 °C
• Power efficient product
• ECOPACK® 2 compliant

Description
The STPSC16H065A SiC diode is an ultrahigh performance power Schottky diode. It
is manufactured using a silicon carbide substrate. The wide band gap material allows
the design of a Schottky diode structure with a 650 V rating. Due to the Schottky
construction, no recovery is shown at turn-off and ringing patterns are negligible. The
minimal capacitive turn-off behavior is independent of temperature.
Especially suited for use in PFC applications, this ST SiC diode, packaged in
TO-247, will boost the performance in hard switching conditions. Its high forward
Product status link surge capability ensures a good robustness during transient phases.

Applications
• DC/DC converter
• High frequency inverter
• Boost PFC function