UGF09085P データシート(PDF) - Cree, Inc

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UGF09085P データシート (PDF) - Cree, Inc

UGF09085P Datasheet PDF - Cree, Inc


部品番号	UGF09085P

ダウンロード	UGF09085P ダウンロード

ファイルサイズ	202.95 Kbytes

ページ	6 Pages

メーカー	CREE [Cree, Inc]

ホームページ	http://www.cree.com/

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部品情報	90W, 865-880 MHz, 26V Broadband RF Power N-Channel Enhancement-Mode Lateral MOSFET

UGF09085P Datasheet (PDF)

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UGF09085P Datasheet PDF - Cree, Inc


部品番号	UGF09085P

ダウンロード	UGF09085P Click to download

ファイルサイズ	202.95 Kbytes

ページ	6 Pages

メーカー	CREE [Cree, Inc]

ホームページ	http://www.cree.com/

Logo

部品情報	90W, 865-880 MHz, 26V Broadband RF Power N-Channel Enhancement-Mode Lateral MOSFET

UGF09085P データシート (HTML) - Cree, Inc

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同様の部品番号 - UGF09085P

メーカー	部品番号	データシート	部品情報
Cree, Inc	UGF09030	197Kb / 7P	30W, 1 GHz, 26V Broadband RF Power N-Channel Enhancement-Mode Lateral MOSFET
Cree, Inc	UGF09030P	197Kb / 7P	30W, 1 GHz, 26V Broadband RF Power N-Channel Enhancement-Mode Lateral MOSFET

同様の説明 - UGF09085P

メーカー	部品番号	データシート	部品情報
Motorola, Inc	MRF185	56Kb / 4P	LATERAL N-CHANNEL BROADBAND RF POWER MOSFET
Motorola, Inc	MRF3010	106Kb / 8P	LATERAL N-CHANNEL BROADBAND RF POWER MOSFET
List of Unclassifed Man...	UGF27025	315Kb / 7P	25W, 2.7 GHz, 28V Broadband RF Power N-Channel Enhancement-Mode Lateral MOSFET
Tyco Electronics	MAPLST0810-090CF	138Kb / 4P	RF Power Field Effect Transistor LDMOS, 865 - 960 MHz, 90W, 26V
PEAK electronics GmbH	AGR09045E	340Kb / 8P	45 W, 865 MHz-895 MHz, N-Channel E-Mode, Lateral MOSFET
Tyco Electronics	MAPLST0810-090CF-05-2004	138Kb / 4P	RF Power Field Effect Transistor LDMOS, 865 - 960 MHz, 90W, 26V
TriQuint Semiconductor	AGR09030E	337Kb / 7P	30 W, 865 MHz-895 MHz, N-Channel E-Mode, Lateral MOSFET
	AGR09045E	334Kb / 7P	45 W, 865 MHz-895 MHz, N-Channel E-Mode, Lateral MOSFET
	AGR09085E	354Kb / 8P	85 W, 865 MHz-895 MHz, N-Channel E-Mode, Lateral MOSFET
Cree, Inc	UGF09030	197Kb / 7P	30W, 1 GHz, 26V Broadband RF Power N-Channel Enhancement-Mode Lateral MOSFET

Cree, Inc について

Cree, Inc. is an American semiconductor company that specializes in the design and manufacture of wide bandgap semiconductors, including silicon carbide (SiC) and gallium nitride (GaN) devices, as well as LED lighting and power electronics products. The company was founded in 1987 and is headquartered in Durham, North Carolina.

Cree's wide bandgap semiconductors are used in a variety of applications, including power electronics, automotive, aerospace, and defense. The company's SiC and GaN devices are known for their high efficiency, high power density, and high operating temperature, making them ideal for use in applications where high performance is critical.

In addition to its wide bandgap semiconductor products, Cree also offers LED lighting products, including bulbs, fixtures, and chips, that are used in a variety of applications, including residential, commercial, and industrial lighting. Cree's LED lighting products are known for their high quality, energy efficiency, and long lifespan.

Cree has a strong focus on innovation and research and development, and is committed to developing new and innovative products that meet the evolving needs of its customers. The company has a global presence, with offices and facilities located in the United States, Europe, and Asia, and serves customers in more than 100 countries worldwide.

*この情報はあくまでも一般的な情報であり、上記の情報によって生じたいかなる損失や損害についても責任を負うものではありません。

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