RFD3055SM データシート(PDF) - Harris Corporation

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RFD3055SM データシート (PDF) - Harris Corporation

RFD3055SM Datasheet PDF - Harris Corporation


部品番号	RFD3055SM

ダウンロード	RFD3055SM ダウンロード

ファイルサイズ	118.15 Kbytes

ページ	8 Pages

メーカー	HARRIS [Harris Corporation]

ホームページ	http://www.harris.com

Logo

部品情報	12A, 60V, Avalanche Rated, N-Channel Enhancement-Mode Power MOSFETs (MegaFETs)

RFD3055SM Datasheet (PDF)

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RFD3055SM Datasheet PDF - Harris Corporation


部品番号	RFD3055SM

ダウンロード	RFD3055SM Click to download

ファイルサイズ	118.15 Kbytes

ページ	8 Pages

メーカー	HARRIS [Harris Corporation]

ホームページ	http://www.harris.com

Logo

部品情報	12A, 60V, Avalanche Rated, N-Channel Enhancement-Mode Power MOSFETs (MegaFETs)

RFD3055SM データシート (HTML) - Harris Corporation

RFD3055SM Datasheet HTML 1Page - Harris Corporation

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RFD3055SM Datasheet HTML 5Page - Harris Corporation

RFD3055SM Datasheet HTML 6Page - Harris Corporation

RFD3055SM Datasheet HTML 7Page - Harris Corporation

RFD3055SM Datasheet HTML 8Page - Harris Corporation

RFD3055SM 製品詳細

Description
The RFD3055, RFD3055SM and RFP3055 N-Channel power MOSFETs are manufactured using the MegaFET process. This process, which uses feature sizes approaching those of LSI integrated circuits gives optimum utilization of silicon, resulting in outstanding performance. They were designed for use in applications such as switching regulators, switching converters, motor drivers, relay drivers and emitter switches for bipolar transistors. These transistors can be operated directly from integrated circuits.

Features
• 12A, 60V
• rDS(ON) = 0.150Ω
• Temperature Compensating PSPICE Model
• Peak Current vs Pulse Width Curve
• UIS Rating Curve
• +175°C Operating Temperature

同様の部品番号 - RFD3055SM

メーカー	部品番号	データシート	部品情報
Intersil Corporation	RFD3055SM	82Kb / 8P	12A, 60V, 0.150 Ohm, N-Channel Power MOSFETs July 1999
Fairchild Semiconductor	RFD3055SM	418Kb / 8P	12A, 60V, 0.150 Ohm, N-Channel Power MOSFETs
Inchange Semiconductor ...	RFD3055SM	299Kb / 2P	isc N-Channel MOSFET Transistor
Fairchild Semiconductor	RFD3055SM9A	424Kb / 8P	12A, 60V, 0.150 Ohm, N-Channel Power MOSFETs
BYCHIP ELECTRONICS CO.,...	RFD3055SM9A	780Kb / 5P	N-channel Enhancement Mode Power MOSFET v1.0

同様の説明 - RFD3055SM

メーカー	部品番号	データシート	部品情報
Fairchild Semiconductor	RFG45N06	82Kb / 6P	45A, 60V, Avalanche Rated N-Channel Enhancement-Mode Power MOSFETs
Fairchild Semiconductor	RFG70N06	90Kb / 6P	70A, 60V, Avalanche Rated, N-Channel Enhancement-Mode Power MOSFETs
Harris Corporation	RFP30N06LE	91Kb / 6P	30A, 60V, ESD Rated, Avalanche Rated, Logic Level N-Channel Enhancement-Mode Power MOSFETs
Fairchild Semiconductor	RFP70N03	588Kb / 6P	70A, 30V, Avalanche Rated N-Channel Enhancement-Mode Power MOSFETs
IXYS Corporation	IXTH110N25T	210Kb / 5P	TrenchTM Power MOSFETs N-Channel Enhancement Mode Avalanche Rated
	IXTA10P50P	185Kb / 6P	PolarPTM Power MOSFETs P-Channel Enhancement Mode Avalanche Rated
	IXTY32P05T	187Kb / 6P	TrenchPTM Power MOSFETs P-Channel Enhancement Mode Avalanche Rated
	IXTP450P2	144Kb / 5P	Polar2TM Power MOSFETs N-Channel Enhancement Mode Avalanche Rated
	IXTA140P05T	222Kb / 6P	TrenchP Power MOSFETs P-Channel Enhancement Mode Avalanche Rated
	IXFA60N25X3	272Kb / 6P	N-Channel Enhancement Mode Avalanche Rated Avalanche Rated

Harris Corporation について

Harris Corporation was a Florida-based technology company that specialized in communications and information technology. The company was founded in 1895 and went through several iterations over the years, including mergers and acquisitions.

In 2019, Harris Corporation merged with L3 Technologies to form L3Harris Technologies, which is now one of the largest defense companies in the world. The company provides a wide range of products and services in the areas of aerospace, defense, communications, and intelligence.

Some of Harris Corporation's previous areas of focus included tactical radios, satellite communications systems, air traffic control systems, and cybersecurity solutions. The company's customers included the U.S. military, government agencies, and commercial organizations around the world.

*この情報はあくまでも一般的な情報であり、上記の情報によって生じたいかなる損失や損害についても責任を負うものではありません。

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