General Description

This Power MOSFET is produced using Wisdom’s advanced planar stripe, DMOS technology. This latest technology has been especially designed to minimize on-state resistance, have a high rugged avalanche characteristics. These devices are well suited for high efficiency switch mode power supplies, active power factor correction, electronic lamp ballasts based on half bridge topology.

Features

■RDS(on)(Max 0.022 Ω)@VGS=10V

■Gate Charge (Typical 32nC)

■Improved dv/dt Capability, High Ruggedness

■100% Avalanche Tested

■Maximum Junction Temperature Range (175°C)