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TPD1009S データシート (PDF) - Toshiba Semiconductor

TPD1009S Datasheet PDF - Toshiba Semiconductor
部品番号 TPD1009S
ダウンロード  TPD1009S ダウンロード
ファイルサイズ   353.3 Kbytes
ページ   10 Pages
メーカー  TOSHIBA [Toshiba Semiconductor]
ホームページ  http://www.semicon.toshiba.co.jp/eng
Logo TOSHIBA - Toshiba Semiconductor
部品情報 THOSHIBA INTELLIGENT POWER DEVICE SILICON MONOLITHIC POWER MOS INTERGRATED CIRCUIT

TPD1009S Datasheet (PDF)

Go To PDF Page ダウンロード データシート
TPD1009S Datasheet PDF - Toshiba Semiconductor

部品番号 TPD1009S
ダウンロード  TPD1009S Click to download

ファイルサイズ   353.3 Kbytes
ページ   10 Pages
メーカー  TOSHIBA [Toshiba Semiconductor]
ホームページ  http://www.semicon.toshiba.co.jp/eng
Logo TOSHIBA - Toshiba Semiconductor
部品情報 THOSHIBA INTELLIGENT POWER DEVICE SILICON MONOLITHIC POWER MOS INTERGRATED CIRCUIT

TPD1009S データシート (HTML) - Toshiba Semiconductor


TPD1009S 製品詳細

High−side Power Switch for Motors, Solenoids, and Lamp Drivers.

TPD1009S is a monolithic power IC for high−side switches. The IC has a vertical MOS FET output which can be directly driven from a CMOS or TTL logic circuit (eg, an MPU). The device offers intelligent self−protection and diagnostic functions.

Features
● A monolithic power IC with a new structure combining a control block (Bi−CMOS) and a vertical power MOS FET (π−MOS) on a single chip.
● One side of load can be grounded to a high−side switch.
● Can directly drive a power load from a microprocessor.
● Built−in protection against thermal shutdown and load short circuiting.
● Incorporates a diagnosis function that allows diagnosis output to be read externally at load short circuiting, opening, or overtemperature.
● Up to −10V of counterelectromotive force from an L load can be applied.
● Low on resistance : RON = 60mΩ (max)
● Low operating current : IDD = 1mA (typ.) (@VDD = 12V, VIN = 0V)
● 5−pin TO−220 insulated package.
● Three standard lead configurations.




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