Description
The TC518512PL is a 4M bit high speed CMOS pseudo static RAM organized as 524,288 words by 8 bits. The TC518512PL utilizes
a one transistor dynamic memory cell with CMOS peripheral circuitry to provide high capacity, high speed and low power storage. The
TC518512PL operates from a single 5V power supply. Refreshing is supported by a refresh (OE/RFSH) input which enables two
types of refreshing - auto refresh and self refresh. The TC518512PL features a static RAM-like interface with a write cycle in which
the input data is written into the memory cell at the rising edge of R/W thus simplifying the microprocessor interface.
The TC518512PL is available in a 32-pin, 0.6 inch width plastic DIP, a small outline plastic flat package, and a thin small outline
package (forward type, reverse type).

Features
• Organization: 524,288 words x 8 bits
• Single 5V power supply
• Fast access time
ICEA CE Access Time
toEA
OE Access Time
tac Cycle Time
Power Dissipation
Self Refresh Current
TC518512PL Family
-80
80ns
30ns
130ns
-70
70ns
30ns
115ns
385mW
330mW
200μA
• Self refresh is supported by an internal timer
• Inputs and outputs TTL compatible
• Refresh: 2048 refresh cycles/32ms
• Package
- TC518512PL: DIP32-P-600
- TC518512FL: SOP32-P-525
- TC518512FTL: TSOP32-P-400
TC518512TRL: TSOP32-P-400A
-10
100ns
40ns
• Auto refresh is supported by an internal refresh address
counter
160ns
275mW