DESCRIPTION
The SFH691AT has a GaAs infrared emitting diode emitter,
which is optically coupled to silicon planar phototransistor
detector, and is incorporated in a 4 pin 100 mil lead pitch
miniflat package. It features a high current transfer ratio, low
coupling capacitance, and high isolation voltage.
The coupling devices are designed for signal transmission
between two electrically separated circuits.

FEATURES
• SOP (small outline package)
• Isolation test voltage, 3750 VRMS (1 s)
• High collector emitter breakdown voltage,
VCEO = 70 V
• Bidirectional AC input
• Low saturation voltage
• Fast switching times
• Temperature stable
• Low coupling capacitance
• End stackable, 0.100" (2.54 mm) spacing
• Material categorization: For definitions of compliance
please see www.vishay.com/doc?99912