SUMMARY DESCRIPTION
The M59DR032E is a 32 Mbit (2Mbit x16) non-volatile Flash memory that may be erased electrically at block level and programmed in-system on a Word-by-Word basis using a 1.65V to 2.2V VDD supply for the circuitry and a 1.65V to 2.2V VDDQ supply for the Input/Output pins. An optional 12V VPP power supply is provided to speed up customer programming.
   
FEATURES SUMMARY
■ SUPPLY VOLTAGE
    – VDD = VDDQ = 1.65V to 2.2V for Program,
        Erase and Read
    – VPP = 12V for fast Program (optional)
■ ASYNCHRONOUS PAGE MODE READ
    – Page Width: 4 Words
    – Page Access: 35ns
    – Random Access: 85ns, 100ns and 120ns
■ PROGRAMMING TIME
    – 10µs by Word typical
    – Double Word Program Option
■ MEMORY BLOCKS
    – Dual Bank Memory Array: 4 Mbit, 28 Mbit
    – Parameter Blocks (Top or Bottom location)
■ DUAL BANK OPERATIONS
    – Read within one Bank while Program or
        Erase within the other
    – No delay between Read and Write operations
■ BLOCK LOCKING
    – All blocks locked at Power up
    – Any combination of blocks can be locked
    – WP for Block Lock-Down
■ COMMON FLASH INTERFACE (CFI)
    – 64 bit Unique Device Identifier
    – 64 bit User Programmable OTP Cells
■ ERASE SUSPEND and RESUME MODES
■ 100,000 PROGRAM/ERASE CYCLES per
    BLOCK
■ 20 YEARS DATA RETENTION
    – Defectivity below 1ppm/year
■ ELECTRONIC SIGNATURE
    – Manufacturer Code: 0020h
    – Top Device Code, M59DR032EA: 00A0h
    – Bottom Device Code, M59DR032EB: 00A1h