Features
• AEC-Q101 qualified
• 6 μs of short-circuit withstand time
• VCE(sat) = 1.65 V (typ.) @ IC = 120 A
• Tight parameter distribution
• Safer paralleling
• Positive VCE(sat) temperature coefficient
• Low thermal resistance
• Soft and very fast recovery antiparallel diode
• Maximum junction temperature: TJ = 175 °C

Applications
• Heating system
• HV battery disconnect and fire-off system
• Main inverter (electric traction)

Description
This device is an IGBT developed using an advanced proprietary trench gate fieldstop
structure. The device is part of the M series IGBTs, which represent an optimal
balance between inverter system performance and efficiency where the low-loss
and the short-circuit functionality is essential. Furthermore, the positive VCE(sat)
temperature coefficient and the tight parameter distribution result in safer paralleling
operation.