Description
This FET has the over temperature shut-down capability sensing to the junction temperature. This FET has the built-in
over temperature shut-down circuit in the gate area. And this circuit operation to shut-down the gate voltage in case of
high junction temperature like applying over power consumption, over current etc..
Features
 Logic level operation (4 V Gate drive).
 Built-in the over temperature shut-down circuit.
 High endurance capability against to the short circuit.
 Latch type shut down operation (need 0 voltage recovery).
 Built-in the current limitation circuit.
 Power supply voltage applies 12 V.
 AEC-Q101 Compliant.
 Endurance capability against to ESD.