1 270/1 290/1 310/1 330 nm AlGaInAs MQW-DFB LASER DIODE
FOR 40GBASE-LR4 & 10 Gb/s E-PON ONU APPLICATION

DESCRIPTION
The NX6350GP series is a 1 270/1 290/1 310/1 330 nm Multiple Quantum
Well (MQW) structured Distributed Feed-Back (DFB) laser diode with
InGaAs monitor PIN-PD.
APPLICATIONS
• 40GBASE-LR4
• 10 Gb/s E-PON ONU
• Bi-Directional 10G SFP+ (CPRI,10G-Ethernet)
FEATURES
• Optical output power PO = 8.5 mW
• Low threshold current Ith = 8 mA
• Differential efficiency ηd = 0.35 W/A
• Wide operating temperature range TC = −5 to +85°C
• InGaAs monitor PIN-PD
• CAN package φ 5.6 mm
• Focal point 7.5 mm