DESCRIPTION
Enhancement type field-effect transistor in a plastic microminiature SOT143B and SOT143R package. The transistor consists of an amplifier MOS-FET with source and substrate interconnected and an internal bias circuit to ensure good cross-modulation performance during AGC.
  
FEATURES
• Specially designed for use at 5 V supply voltage
• Short channel transistor with high transfer admittance to
    input capacitance ratio
• Low noise gain controlled amplifier up to 1 GHz
• Superior cross-modulation performance during AGC.

APPLICATIONS
• VHF and UHF applications with 3 to 7 V supply voltage
    such as television tuners and professional
    communications equipment.