DESCRIPTION
Dual transistor with two silicon NPN RF dies in a surface mount, 6-pin SOT363 (S-mini) package. The transistors are primarily intended for wideband applications in the GHz-range in the RF front end of analog and digital cellular phones, cordless phones, radar detectors, pagers and satellite TV-tuners.

FEATURES
• Small size
• Temperature and hFE matched
• Low noise and high gain
• High gain at low current and low capacitance at low voltage
• Gold metallization ensures excellent reliability.

APPLICATIONS
• Oscillator and buffer amplifiers
• Balanced amplifiers
• LNA/mixer.