The 1.8 Volt Intel StrataFlash® wireless memory with 3-Volt I/O product is the latest generation of Intel StrataFlash® memory devices featuring flexible, multiple-partition, dual operation. It provides high performance synchronous-burst read mode and asynchronous read mode using 1.8 volt low-voltage, multilevel cell (MLC) technology.

■ High performance Read-While-Write/Erase
— 85 ns initial access
— 52MHz with zero wait state, 17 ns clock-to-data
output synchronous-burst mode
— 25 ns asynchronous-page mode
— 4-, 8-, 16-, and continuous-word burst mode
— Burst suspend
— Programmable WAIT configuration
— Buffered Enhanced Factory Programming
(Buffered EFP): 3.5 µs/byte (Typ)
— 1.8 V low-power buffered and non-buffered
programming @ 10 µs/byte (Typ)
■ Architecture
— Asymmetrically-blocked architecture
— Multiple 8-Mbit partitions: 64Mb and 128Mb
devices
— Multiple 16-Mbit partitions: 256Mb devices
— Four 16-KWord parameter blocks: top or
bottom configurations
— 64K-Word main blocks
— Dual-operation: Read-While-Write (RWW) or
Read-While-Erase (RWE)
— Status register for partition and device status
■ Power
— 1.7 V - 2.0 V VCC operation
— I/O voltage: 2.2 V - 3.3 V
— Standby current: 30 µA (Typ)
— 4-Word synchronous read current: 17 mA (Typ) @ 54 MHz
— Automatic Power Savings (APS) mode