Description
The GTRA384802FC is a 400-watt (P3dB) GaN on SiC high
electron mobility transistor (HEMT) for use in multi-standard
cellular power amplifier applications. It features input and
output matching, high efficiency, and a thermally-enhanced
package with earless flange.
Features
• GaN on SiC HEMT technology
• Asymmetric Doherty design
- Main: P3dB = 200 W typ
- Peak: P3dB = 280 W typ
• Typical pulsed CW performance, 3800 MHz, 48 V,
combined outputs, Doherty @ P3dB, 10 µs, 10%
duty cycle
- Output power = 400 W
- Drain efficiency = 62%
- Gain = 12 dB
• Capable of handling 10:1 VSWR at 48 V, 63 W
(WCDMA)output power
• Human Body Model Class 1B (per ANSI/ESDA/
JEDEC JS-001)
• Pb-free and RoHS compliant