FEATURES
• Seven H-bridge circuits employing power MOS FET
• Low-voltage driving
VDD = 2.7 to 3.6 V
VM = 2.7 to 5.5 V
• Output on-state resistance: 1.0 Ω TYP., 1.5 Ω MAX. (sum of top and bottom stage)
• Output current
<1 ch to 6 ch>
DC current: 0.4 A/ch (when each channel is used independently)
Peak current: 0.7 A/ch (when each channel is used independently)
<7 ch>
DC current: 0.5 A/ch (when used independently)
Peak current: 0.7 A/ch (when used independently)
• Input logic frequency: 6 MHz supported
• Undervoltage lockout circuit
Shuts down the internal circuit at VDD = 1.7 V TYP.
• Overheat protection circuit
Operates at 150°C or more and shuts down internal circuitry.
• 56-pin WQFN (□8 mm, 0.5 mm pitch)