Description
This new device employs advanced HEXFET Power MOSFET technology to achieve an unprecedented balance of on-resistance and gate charge. The reduction of conduction and switching losses makes it ideal for high efficiency DC-DC Converters that power the latest generation of mobile microprocessors.
A pair of IRF7807V devices provides the best cost/performance solution for system voltages, such as 3.3V and 5V

• N Channel Application Specific MOSFET
• Ideal for Mobile DC-DC Converters
• Low Conduction Losses
• Low Switching Losses
• 100% RG Tested
• Lead-Free