Description
The NCE4606B uses advanced trench technology to provide
excellent RDS(ON) and low gate charge . The complementary
MOSFETs may be used to form a level shifted high side
switch, and for a host of other applications.

General Features
● N-Channel
VDS = 30V,ID =6A
RDS(ON) < 25mΩ @ VGS=10V
RDS(ON) < 44mΩ @ VGS=4.5V
● P-Channel
VDS = -30V,ID = -6A
RDS(ON) < 39mΩ @ VGS=-10V
RDS(ON) < 51mΩ @ VGS=-4.5V
● High power and current handing capability
● Lead free product is acquired
● Surface mount package