Description
The device in manufactured in low voltage NPN Planar Technology by using a “Base Island” layout. The resulting transistor shows exceptional high gain performance coupled with very low saturation voltage.

General features
■ Very low Collector to Emitter saturation voltage
■ D.C. Current gain, hFE >100
■ 3A continuous collector current
■ 40V breakdown voltage (V(BR)CER)
■ In compliance with the 2002/93/EC European Directive

Applications
■ Power management in portable equipment
■ Voltage regulation in bias supply circuits
■ Switching regulator in battery charger applications
■ Heavy load driver