General description
Nexperia introduces leading edge Silicon Carbide (SiC) Schottky diode for ultra high performance,
low loss, high efficiency power conversion applications. The SiC Schottky diode encapsulated
in a Real-2-Pin D2PAK R2P (TO-263-2) Surface-Mounted Device (SMD) power plastic package
offers temperature independent capacitive turn-off, zero recovery switching behavior combined
with an outstanding figure-of-merit (QC x VF). The Merged PiN Schottky (MPS) diode improves the
robustness expressed in a high IFSM.

Features and benefits
• Zero forward and reverse recovery
• Temperature independent fast and smooth switching performance
• Outstanding figure of merit (Qc
x VF)
• High IFSM capability
• High power density
• Reduced system costs
• System miniaturization
• Reduced EMI

Applications
• Switch mode power Supply (SMPS)
• AC-DC and DC-DC converter
• Battery charging infrastructure
• Server and telecom power supply
• Uninterruptible power supply (UPS)
• Photovoltaic inverters