Features
• UltraFast: optimized for high operating frequencies 8-40 kHz in hard switching, >200 kHz in resonant mode
• Generation 4 IGBT design provides tighter parameter distribution and higher efficiency than Generation 3
• IGBT co-packaged with HEXFRED® ultrafast, ultra-soft-recovery anti-parallel diodes for use in bridge configurations
• Industry standard TO-220AB package
• Lead-Free

Benefits
• Generation -4 IGBTs offer highest efficiencies available
• IGBTs optimized for specific application conditions
• HEXFRED diodes optimized for performance with IGBTs. Minimized recovery characteristics require less/no snubbing
• Designed to be a "drop-in" replacement for equivalent industry-standard Generation 3 IR IGBTs