Description
These HEXFET® Power MOSFETs in SO-8 package utilize the lastest processing techniques to achieve extremely low on-resistance per silicon area. Additional features of these HEXFET Power MOSFETs are a 150°C junction operating temperature, fast switching speed and improved repetitive avalanche rating. These benefits combine to make this design an extremely efficient and reliable device for use in a wide variety of applications.

● Advanced Process Technology
● Ultra Low On-Resistance
● N Channel MOSFET
● Surface Mount
● Available in Tape & Reel
● 150°C Operating Temperature
● Lead-Free