General Description：
CS20N60F A9H, the silicon N-channel Enhanced
VDMOSFETs, is obtained by the self-aligned planar Technology
which reduce the conduction loss, improve switching
performance and enhance the avalanche energy. The transistor can
be used in various power switching circuit for system
miniaturization and higher efficiency. The package form is
TO-220F, which accords with the RoHS standard..

Features：
l Fast Switching
l Low ON Resistance(Rdson≤0.45Ω)
l Low Gate Charge (Typical Data:61nC)
l Low Reverse transfer capacitances(Typical: 20pF)
l 100% Single Pulse avalanche energy Test