1 Features
• Specified for defense and aerospace applications
• Controlled baseline
• One assembly and test site
• One fabrication site
• Product traceability
• Extended product life cycle
• Local and remote diode temperature sensor
– ±2.5°C error, maximum
– 0.0625°C resolution
• Internal EEPROM for autonomous operation
– Storage for four independent transfer functions
– Device configuration storage
– Open space for user storage
– Qualified for 15-year retention
• Four analog outputs
– Four monotonic DACs: 1.22mV resolution
– Automatically configured output ranges:
• Positive output voltage: 5.5V, maximum
• Negative output voltage: –10V, minimum
– High current drive capability:
• Source up to 100mA
• Sink up to 20mA
– High capacitive load tolerant: up to 15μF
• Gate bias on and off control switches
– Two programmable off voltages
• Two auxiliary DACs: 1.22mV resolution
– Fast switching time: 50ns, typical
– Low resistance: 3Ω, maximum
• Built-in sequencing control
• Internal 2.5V reference
• SPI and I2C interfaces: 1.7V to 3.6V operation
– SPI: 4-wire Interface
– I2C: Eight selectable peripheral addresses
• Specified temperature range: –55°C to +125°C

2 Applications
• Radar
• Electronic warfare
• Communications payload
• Defense radio

3 Description
The AFE10004-EP is a highly integrated,
autonomous, power-amplifier (PA) precision analog
front end (AFE) that includes four temperature
compensation digital-to-analog converters (DACs),
integrated EEPROM, and gate bias switches. The four
DACs are programmed by four independent, userdefined,
temperature-to-voltage transfer functions
stored in the internal EEPROM. This design allows
correction any temperature effects to be corrected
without additional external circuitry. After start-up, the
device operates without intervention from a system
controller to provide a complete system for setting and
compensating bias voltages in control applications.
The AFE10004-EP has four gate bias outputs that
are switched on and off through dedicated control
pins. The gate bias switches are designed for fast
response. In combination with the device PA_ON pin,
this fast response enables correct power sequencing
and protection of depletion-mode transistors, such as
GaAs and GaN.
The function integration and wide operating
temperature range make the AFE10004-EP an
excellent choice as an all-in-one, autonomous bias
control circuit for the power amplifiers found in RF
systems. The flexible DAC output ranges and builtin
sequencing features let the device be used as
a biasing controller for a large variety of transistor
technologies, such as LDMOS, GaAs, and GaN.