Features
■ –8.2 A, –40 V RDS(ON) = 0.027 Ω @ VGS = –10 V
RDS(ON) = 0.035 Ω @ VGS = –4.5 V
■ Fast switching speed
■ High performance trench technology for extremely low RDS(ON)
■ High power and current handling capability

Applications
■ Power management
■ Load switch
■ Battery protection

General Description
This P-Channel MOSFET is a rugged gate version of Fairchild Semiconductor’s advanced PowerTrench process. It has been optimized for power management applications requiring a wide range of gate drive voltage ratings (4.5V – 20V).