SUMMARY DESCRIPTION
The M36WT864 is a low voltage Multiple Memory Product which combines two memory devices; a 64 Mbit Multiple Bank Flash memory and an 8 Mbit SRAM. Recommended operating conditions do not allow both the Flash and the SRAM to be active at the same time.
The memory is offered in a Stacked LFBGA96 (8 x 14mm, 0.8 mm pitch) package and is supplied with all the bits erased (set to ‘1’).

FEATURES SUMMARY
■ SUPPLY VOLTAGE
    – VDDF = 1.65V to 2.2V
    – VDDS = VDDQF = 2.7V to 3.3V
    – VPPF = 12V for Fast Program (optional)
■ ACCESS TIME: 70, 85, 100ns
■ LOW POWER CONSUMPTION
■ ELECTRONIC SIGNATURE
    – Manufacturer Code: 20h
    – Top Device Code, M36WT864TF: 8810h
    – Bottom Device Code, M36WT864BF: 8811h

FLASH MEMORY
■ PROGRAMMING TIME
    – 8µs by Word typical for Fast Factory Program
    – Double/Quadruple Word Program option
    – Enhanced Factory Program options
■ MEMORY BLOCKS
    – Multiple Bank Memory Array: 4 Mbit Banks
    – Parameter Blocks (Top or Bottom location)
■ DUAL OPERATIONS
    – Program Erase in one Bank while Read in others
    – No delay between Read and Write operations
■ BLOCK LOCKING
    – All blocks locked at Power up
    – Any combination of blocks can be locked
    – WP for Block Lock-Down
■ SECURITY
    – 128 bit user programmable OTP cells
    – 64 bit unique device number
    – One parameter block permanently lockable
■ COMMON FLASH INTERFACE (CFI)
■ 100,000 PROGRAM/ERASE CYCLES per BLOCK

SRAM
■ 8 Mbit (512K x 16 bit)
■ EQUAL CYCLE and ACCESS TIMES: 70ns
■ LOW STANDBY CURRENT
■ LOW VDDS DATA RETENTION: 1.5V
■ TRI-STATE COMMON I/O
■ AUTOMATIC POWER DOWN