DESCRIPTION
This Power Mosfet is the latest development of STMicroelectronics unique "Single Feature Size" strip-based process. The resulting transistor shows extremely high packing density for low onresistance,rugged avalance characteristics and less critical alignment steps therefore a remarkable manufacturing reproducibility.

FEATURES SUMMARY
■ TYPICAL RDS(on) = 0.013 Ω
■ EXCEPTIONAL dv/dt CAPABILITY
■ 100% AVALANCHE TESTED
■ LOW GATE CHARGE 100°C
■ HIGH dv/dt CAPABILITY
■ APPLICATION ORIENTED CHARACTERIZATION

APPLICATIONS
■ DC MOTOR CONTROL
■ DC-DC & DC-AC CONVERTERS
■ SYNCHRONOUS RECTIFICATION