Description
Using the latest high voltage technology, STMicroelectronics has designed an advanced family of power Mosfets with outstanding performances. The new patent pending strip layout coupled with the Company’s proprietary edge termination structure, gives the lowest RDS(on) per area, exceptional avalanche and dv/dt capabilities and unrivalled gate charge and switching characteristics.

Features
■ TYPICAL RDS(on) = 0.22 Ω
■ EXTREMELY HIGH dv/dt CAPABILITY
■ ± 30V GATE TO SOURCE VOLTAGE RATING
■ 100% AVALANCHE TESTED
■ REPETITIVE AVALANCHE DATA AT 100oC
■ VERY LOW INTRINSIC CAPACITANCES
■ GATE CHARGE MINIMIZED

Applications
■ HIGH CURRENT, HIGH SPEED SWITCHING
■ SWITCH MODE POWER SUPPLIES (SMPS)
■ DC-AC CONVERTERS FOR WELDING EQUIPMENT AND UNINTERRUPTIBLE POWER SUPPLIES AND MOTOR DRIVE  INTERNAL SCHEMATIC DIAGRAM October 1999 1 2 3 TO-247