DESCRIPTION
The TCET110. consists of a phototransistor optically coupled to a gallium arsenide infrared-emitting diode in a 4-lead plastic dual inline package.

FEATURES
• High common mode rejection
• Low temperature coefficient of CTR
• CTR offered in 9 groups
• Reinforced isolation provides circuit protection against electrical shock (safety class II)
• Isolation materials according to UL 94 V-O
• Pollution degree 2 (DIN/VDE 0110/resp. IEC 60664)
• Climatic classification 55/100/21 (IEC 60068 part 1)
• Rated impulse voltage (transient overvoltage) VIOTM = 6 kVpeak
• Isolation test voltage (partial discharge test voltage) Vpd = 1.6 kV
• Rated isolation voltage (RMS includes DC) VIOWM = 600 VRMS
• Rated recurring peak voltage (repetitive) VIORM = 848 Vpeak
• Creepage current resistance according to VDE 0303/ IEC 60112 comparative tracking index: CTI ≥ 175
• Compliant to RoHS directive 2002/95/EC and in accordance to WEEE 2002/96/EC

APPLICATIONS
Circuits for safe protective separation against electrical shock according to safety class II (reinforced isolation):
• for appl. class I - IV at mains voltage ≤ 300 V
• for appl. class I - III at mains voltage ≤ 600 V according to DIN EN 60747-5-5 (VDE 0884), suitable for:
    - Switch-mode power supplies
    - Line receiver
    - Computer peripheral interface
    - Microprocessor system interface