Description
Microsemi’s GaAs abrupt junction varactors are fabricated from epitaxial layers grown at Microsemi using Chemical Vapor Deposition. The layers are processed using proprietary techniques resulting in a high Q factor and very repeatable tuning curves. The diodes are available in a variety of microwave ceramic packages or chips for operation from UHF to millimeter wave frequencies.

Features
● High Q Values for Higher Frequency Performance
● Constant Gamma Design
● Low Reverse Current
● Available as Chip or Packaged Diodes
● Available in Chip-on-Board Packaging
● Custom Designs Available

Applications
● VCOs
● Phase-Locked Oscillators
● High Q Tunable Filters
● Phase Shifters
● Pre-Selectors