DESCRIPTION
• Drain Current –ID=9A@ TC=25℃
• Drain Source Voltage-
   : VDSS= 200V(Min)
• Static Drain-Source On-Resistance
   : RDS(on) = 0.4Ω (Max)
• Fast Switching Speed
• Low Drive Requirement

APPLICATIONS
• This device is n-channel, enhancement mode, power MOSFET
   designed especially for high power, high speed applications,
   such as switching power supplies,UPS, AC and DC motor controls, relay
   and solenoid drivers and high energy pulse circuits.