General description
A 600 W LDMOS RF power transistor for broadcast transmitter applications and industrial applications. The excellent ruggedness of this device makes it ideal for digital and analog transmitter applications.

Features and benefits
■ Excellent ruggedness (VSWR ≥ 40 : 1 through all phases)
■ Optimum thermal behavior and reliability, Rth(j-c) = 0.15 K/W
■ High power gain
■ High efficiency
■ Designed for broadband operation (470 MHz to 860 MHz)
■ Internal input matching for high gain and optimum broadband operation
■ Excellent reliability
■ Easy power control
■ Compliant to Restriction of Hazardous Substances (RoHS) Directive 2002/95/EC

Applications
■ Communication transmitter applications in the UHF band
■ Industrial applications in the UHF band