| メーカー | 部品番号 | データシート | 部品情報 |
Stanson Technology |
ST2315SRG
|
218Kb / 6P |
ST2315SRG is the P-Channel logic enhancement mode power field effect transistor which is produced using high cell density, DMOS trench technology.
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ST2318SRG
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221Kb / 7P |
ST2318SRG is the N-Channel logic enhancement mode power field effect transistor is produced using high cell density, DMOS trench technology.
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ST2319SRG
|
229Kb / 8P |
ST2319SRG is the P-Channel logic enhancement mode power field effect transistor is produced using high cell density, DMOS trench technology.
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ST3400SRG
|
547Kb / 6P |
The ST3400SRG is the N-Channel logic enhancement mode power field effect transistor is produced using high cell density, DMOS trench technology.
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ST3422A
|
338Kb / 6P |
The ST3422A is the N-Channel logic enhancement mode power field effect transistor is produced using high cell density, DMOS trench technology.
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STP4407
|
545Kb / 6P |
The STP4407 is the P-Channel logic enhancement mode power field effect transistor is produced using high cell density, DMOS trench technology.
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STP4435A
|
311Kb / 6P |
STP4435A is the P-Channel logic enhancement mode power field effect transistor which is produced using high cell density, DMOS trench technology.
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STP6308
|
420Kb / 6P |
STP6308 is the dual P-Channel enhancement mode power field effect transistor which is produced using high cell density, DMOS trench technology.
|
Shenzhen Huazhimei Semi... |
HM603BK
|
938Kb / 8P |
N & P-Channel enhancement mode power field effect transistor using high cell density DMOS trench technology.
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HM609BK
|
2Mb / 8P |
N & P-Channel enhancement mode power field effect transistor using high cell density DMOS trench technology.
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