CAS300M12BM2 データシート(PDF) - Cree, Inc

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CAS300M12BM2 データシート (PDF) - Cree, Inc

CAS300M12BM2 Datasheet PDF - Cree, Inc


部品番号	CAS300M12BM2

ダウンロード	CAS300M12BM2 ダウンロード

ファイルサイズ	849.47 Kbytes

ページ	8 Pages

メーカー	CREE [Cree, Inc]

ホームページ	http://www.cree.com/

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部品情報	1.2kV, 5.0 m廓 All-Silicon Carbide Half-Bridge Module

CAS300M12BM2 Datasheet (PDF)

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CAS300M12BM2 Datasheet PDF - Cree, Inc


部品番号	CAS300M12BM2

ダウンロード	CAS300M12BM2 Click to download

ファイルサイズ	849.47 Kbytes

ページ	8 Pages

メーカー	CREE [Cree, Inc]

ホームページ	http://www.cree.com/

Logo

部品情報	1.2kV, 5.0 m廓 All-Silicon Carbide Half-Bridge Module

CAS300M12BM2 データシート (HTML) - Cree, Inc

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同様の部品番号 - CAS300M12BM2

メーカー	部品番号	データシート	部品情報
WOLFSPEED, INC.	CAS300M12BM2	776Kb / 11P	1200 V, 300 A All-Silicon Carbide High Performance, Switching Optimized, Half-Bridge Module Rev. 2, 2021-02-08
Cree, Inc	CAS300M12BM2	1Mb / 9P	Half-Bridge Module

同様の説明 - CAS300M12BM2

メーカー	部品番号	データシート	部品情報
Cree, Inc	CAS100H12AM1	740Kb / 7P	1200V, 100A Silicon Carbide Half-Bridge Module
Molex Electronics Ltd.	CAS100H12AM1	859Kb / 11P	1200V, 100A Silicon Carbide Half-Bridge Module
Cree, Inc	WAS300M12BM2	1Mb / 9P	1.2kV, 4.2 mohm All-Silicon Carbide THB-80 Half-Bridge Module
	CAB450M12XM3	893Kb / 9P	1200V, 450A All-Silicon Carbide Conduction Optimized, Half-Bridge Module
	CCB032M12FM3	1Mb / 11P	1200 V, 32 m廓 All-Silicon Carbide Six-Pack Module
	CAB016M12FM3	2Mb / 11P	1200 V, 16 m廓 All-Silicon Carbide Half-Bridge Module
General Electric Compan...	GE12047CCA3	491Kb / 9P	1200V half bridge Silicon Carbide Power module Rev. : 1, Public Release May 11, 2021
General Electric Compan...	GE17042CCA3	663Kb / 9P	1700V Half-Bridge Silicon Carbide Power Module Rev 1.1 -Public Release - January 18, 2022
WOLFSPEED, INC.	CAB450M12XM3	892Kb / 9P	1200V, 450A All-Silicon Carbide Conduction Optimized, Half-Bridge Module Rev. A, 2019-06-01
WOLFSPEED, INC.	CAB530M12BM3	1Mb / 11P	1200 V, 530 A All-Silicon Carbide Half-Bridge Module Rev. 0, 2021-03-02

Cree, Inc について

Cree, Inc. is an American semiconductor company that specializes in the design and manufacture of wide bandgap semiconductors, including silicon carbide (SiC) and gallium nitride (GaN) devices, as well as LED lighting and power electronics products. The company was founded in 1987 and is headquartered in Durham, North Carolina.

Cree's wide bandgap semiconductors are used in a variety of applications, including power electronics, automotive, aerospace, and defense. The company's SiC and GaN devices are known for their high efficiency, high power density, and high operating temperature, making them ideal for use in applications where high performance is critical.

In addition to its wide bandgap semiconductor products, Cree also offers LED lighting products, including bulbs, fixtures, and chips, that are used in a variety of applications, including residential, commercial, and industrial lighting. Cree's LED lighting products are known for their high quality, energy efficiency, and long lifespan.

Cree has a strong focus on innovation and research and development, and is committed to developing new and innovative products that meet the evolving needs of its customers. The company has a global presence, with offices and facilities located in the United States, Europe, and Asia, and serves customers in more than 100 countries worldwide.

*この情報はあくまでも一般的な情報であり、上記の情報によって生じたいかなる損失や損害についても責任を負うものではありません。

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