The GP401LSS18 is a single switch 1800V, robust n channel enhancement mode insulated gate bipolar transistor (IGBT) module. Designed for low power loss, the module is suitable for a variety of high voltage applications in motor drives and power conversion. The high impedance gate simplifies gate drive considerations enabling operation directly from low power control circuitry.

FEATURES

■ n - Channel

■ Enhancement Mode

■ High Input Impedance

■ Optimised For High Power High Frequency Operation

■ Isolated Base

■ Ultra Low VCE(sat)

■ 400A Per Module

APPLICATIONS

■ High Power Switching

■ Motor Control

■ Inverters

■ Traction Systems

■ Lower Loss Systems Retrofits