The MA7001 512 x 9 FIFO is manufactured using Dynex Semiconductors CMOS-SOS high performance, radiation hard, 3µm technology.
The Dynex Semiconductor Silicon-on-Sapphire process provides significant advantages over bulk silicon substrate technologies In addition to very good total dose hardness and neutron hardness >1015n/cm2, the Dynex Semiconductor technology provides very high transient gamma and single event upset performance without compromising speed of operation The Sapphire substrate also eliminates latch-up giving greater flexibility of use in electrically severe environments.

FEATURES
■ Radiation Hard CMOS-SOS Technology
■ Fast Access Time 60ns Typical
■ Single 5V Supply
■ Inputs Fully TTL and CMOS Compatible
■ -55°C to +125°C Operation