DESCRIPTION AND APPLICATIONS
The LP6836P100 is a packaged Aluminum Gallium Arsenide / Indium Gallium Arsenide (AlGaAs/InGaAs) Pseudomorphic High Electron Mobility Transistor (PHEMT), utilizing an Electron-Beam direct-write 0.25 µm by 360 µm Schottky barrier gate. The recessed “mushroom” gate structure minimizes parasitic gate-source and gate resistances. The epitaxial structure and processing have been optimized for reliable high-power applications. The LP6836 also features Si3N4 passivation and is available in die form, or P70 packages. Packages are color-coded by IDSS range.

FEATURES
• +24.5 dBm Typical Power at 15 GHz
• 12 dB Typical Power Gain at 15 GHz
• Low Intermodulation Distortion
• 55% Power-Added-Efficiency
• Color-coded by IDSS range