DESCRIPTION AND APPLICATIONS
The LPD200 is an Aluminum Gallium Arsenide / Indium Gallium Arsenide (AlGaAs/InGaAs) Pseudomorphic High Electron Mobility Transistor (PHEMT), utilizing an Electron-Beam directwrite 0.25 mm by 200 mm Schottky barrier gate. The recessed “mushroom” gate structure minimizes parasitic gate-source and gate resistances. The epitaxial structure and processing have been optimized for high dynamic range. The LPD200 also features Si3N4 passivation and is available in various packages, such as ceramic P70 and other plastic packages.
Typical applications include use in low noise, broadband amplifiers.

FEATURES
♦ 21 dBm Output Power at 1-dB Compression at 18 GHz
♦ 12 dB Power Gain at 18 GHz
♦ 1.0 dB Noise Figure at 18 GHz
♦ 55% Power-Added Efficiency