The RF MOSFET Line
RF Power
Field-Effect Transistors
N-Channel Enhancement-Mode MOSFET

Designed for wideband large–signal amplifier and oscillator applications up to 400 MHz range, in either single ended or push–pull configuration.

• Guaranteed 28 Volt, 150 MHz Performance
   Output Power = 30 Watts
   Broadband Gain = 14 dB (Typ)
   Efficiency = 54% (Typical)
• Small–Signal and Large–Signal
   Characterization
• 100% Tested For Load
   Mismatch At All Phase
   Angles With 30:1 VSWR
• Space Saving Package For
   Push–Pull Circuit
   Applications
• Excellent Thermal Stability,
   Ideally Suited For Class A
   Operation
• Facilitates Manual Gain
   Control, ALC and
   Modulation Techniques