Description
These diodes are manufactured using silicon carbide substrate. This wide bandgap material supports the manufacture of a Schottky diode structure with a high voltage rating. Such diodes exhibit no or negligible recovery characteristics. The recovery characteristics are independent of the temperature. Using these diodes will significantly reduce the switching power losses of the associated MOSFET, and thus increase the efficiency of the overall application. These diodes will then outperform the power factor correction circuit operating in hard switching conditions.

Features
■ No reverse recovery
■ Switching behavior independent of temperature
■ Dedicated to PFC boost diode