Functional Description The CY7C106B and CY7C1006B are high-performance CMOS static RAMs organized as 262,144 words by 4 bits. Easy memory expansion is provided by an active LOW Chip Enable (CE), an active LOW Output Enable (OE), and three-state drivers. These devices have an automatic power-down feature that reduces power consumption by more than 65% when the devices are deselected. Features • High speed — tAA = 12 ns • CMOS for optimum speed/power • Low active power — 495 mW • Low standby power — 275 mW • 2.0V data retention (optional) — 100 µW • Automatic power-down when deselected • TTL-compatible inputs and outputs
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