The TOSHIBA TLP722 consists of a photo−diode optically coupled to a gallium arsenide infrared emitting diode in a four lead plastic DIP (DIP4).

TLP722: Single circuit

• Cathode−anode voltage: 30V (max)
• Current transfer ratio: 0.1% (min)
• Input / output isolation voltage: 4000Vrms (min)
• Operating temperature range: −55~100°C
• Storage temperature range: −55~125°C
• UL recognized: UL1577, E67349
• VDE approved: EN60747-5-2
    Maximum operating insulation voltage: 890VPK
    Maximum permissible over voltage: 8000VPK