Description
These very high voltage N-channel Power MOSFETs are designed using MDmesh™ K5 technology based on an innovative proprietary vertical structure. The result is a dramatic reduction in on-resistance and ultra-low gate charge for applications requiring superior power density and high efficiency. TO-3PF TO-220FP inaugurate inaugurate ' * 6 inaugurateY

Features
■ Industry’s lowest RDS(on) x area
■ Industry’s best figure of merit (FoM)
■ Ultra low gate charge
■ 100% avalanche tested
■ Zener-protected

Applications
■ Switching applications