Description
This device is an IGBT developed using an advanced proprietary trench gate and field stop structure. The device is part of the "V" series of IGBTs, which represent an optimum compromise between conduction and switching losses to maximize the efficiency of very high frequency converters. Furthermore, a positive VCE(sat) temperature coefficient and very tight parameter distribution result in safer paralleling operation. C (2, TAB) E (3) G (1) TO-247 TO-3P 1 2 3 TAB 1 2 3 1 1 2 3 TO-3PF

Features
■ Maximum junction temperature: TJ = 175 °C
■ Very high speed switching series
■ Tail-less switching off
■ Low saturation voltage: VCE(sat) = 1.8 V (typ.) @ IC = 20 A
■ Tight parameters distribution
■ Safe paralleling
■ Low thermal resistance
■ Lead free package

Applications
■ Photovoltaic inverters
■ Uninterruptible power supply
■ Welding
■ Power factor correction
■ Very high frequency converters