Description
This high voltage N-channel Power MOSFET is part of the MDmesh DM2 fast recovery diode series. It offers very low recovery charge and time (Qrr, trr) combined with low RDS(on), rendering it suitable for the most demanding high efficiency converters and ideal for bridge topologies and ZVS phase-shift converters. D(3) G(1) S(2) AM01476v6 6 6 6 * '

Description
The LSM6DSM is a system-in-package featuring a 3D digital accelerometer and a 3D digital gyroscope performing at 0.65 mA in high-performance mode and enabling always-on low-power features for an optimal motion experience for the consumer. The LSM6DSM supports main OS requirements, offering real, virtual and batch sensors with 4 kbyte for dynamic data batching. ST’s family of MEMS sensor modules leverages the robust and mature manufacturing processes already used for the production of micromachined accelerometers and gyroscopes. The various sensing elements are manufactured using specialized micromachining processes, while the IC interfaces are developed using CMOS technology that allows the design of a dedicated circuit which is trimmed to better match the characteristics of the sensing element. The LSM6DSM has a full-scale acceleration range of ±2/±4/±8/±16 g and an angular rate range of ±125/±245/±500/±1000/±2000 dps. The LSM6DSM fully supports EIS and OIS applications as the module includes a dedicated configurable signal processing path for OIS and auxiliary dedicated lowpass filtering. High robustness to mechanical shock makes the LSM6DSM the preferred choice of system designers for the creation and manufacturing of reliable products. The LSM6DSM is available in a plastic land grid array (LGA) package. LGA-14L (2.5 x 3 x 0.83 mm) typ.

Features
■ Fast-recovery body diode
■ Extremely low gate charge and input capacitance
■ Low on-resistance RDS(on)
■ 100% avalanche tested
■ Extremely high dv/dt ruggedness
■ Zener-protected

Applications
■ Switching applications